Mfg Part Number: JS8818-AS
Alternate P/N: JS8818AS
NSN : 5961-01-352-1798
NIIN : 013521798
CAGE Code : 61802
Manufacturer: Toshiba Corp
Item Name : Transistor
Thank you for your interest in our available parts and components on NSN Target. Transistor is an item listed with the part number JS8818-AS, and it is manufactured by Toshiba Corp. This particular item JS8818-AS is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.
NSN Parts is a website that is owned and operated by ASAP Semiconductor, and we serve as a leading independent distributor of NSN parts and components that serve many industries and applications. Throughout our extensive part and manufacturer catalogues, we carry a variety of top requested components that you may need, including JS8818-AS with NSN 5961013521798 and other parts manufactured by Toshiba Corp. Quality is of the utmost importance to us at NSN Parts, and we have established ourselves as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today with a personalized quote and experience how we are revolutionizing the parts procurement process.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-352-1798 Item Description: Transistor | 5961 | 013521798 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Js8818-As | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -6.0 MAXIMUM GATE TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTMZ | III SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
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