Mfg Part Number: 8102403VA
NSN : 5962-01-641-4210
NIIN : 016414210
CAGE Code : 8E775
Manufacturer: Texas Instruments Incorporated
Item Name : Microcircuit Memory
Thank you for your interest in our available parts and components on NSN Target. Microcircuit Memory is an item listed with the part number 8102403VA, and it is manufactured by Texas Instruments Incorporated. This particular item 8102403VA is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.
NSN Parts is a website that is owned and operated by ASAP Semiconductor, and we serve as a leading independent distributor of NSN parts and components that serve many industries and applications. Throughout our extensive part and manufacturer catalogues, we carry a variety of top requested components that you may need, including 8102403VA with NSN 5962016414210 and other parts manufactured by Texas Instruments Incorporated. Quality is of the utmost importance to us at NSN Parts, and we have established ourselves as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today with a personalized quote and experience how we are revolutionizing the parts procurement process.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-641-4210 Item Description: MICROCIRCUIT,MEMORY | 5962 | 016414210 | N | |||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
8102403VA | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND ELECTROSTATIC SENSITIVE" |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CSWJ | WORD QUANTITY | 4096" |
CWSG | TERMINAL SURFACE TREATMENT | TIN" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MEMORY IC" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM TOTAL SUPPLY" |
CZEQ | TIME RATING PER CHACTERISTIC | 220.0 NANOSECONDS MAXIMUM ACCESS" |
CZER | MEMORY DEVICE TYPE | RAM" |
CZZZ | MEMORY CAPACITY | 4K" |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PIN" |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND ELECTROSTATIC SENSITIVE" |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CSWJ | WORD QUANTITY | 4096" |
CWSG | TERMINAL SURFACE TREATMENT | TIN" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MEMORY IC" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM TOTAL SUPPLY" |
CZEQ | TIME RATING PER CHACTERISTIC | 220.0 NANOSECONDS MAXIMUM ACCESS" |
CZER | MEMORY DEVICE TYPE | RAM" |
CZZZ | MEMORY CAPACITY | 4K" |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PIN" |
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