Mfg Part Number: 13401041-8
Alternate P/N: 134010418
NSN : 5962-01-275-6635
NIIN : 012756635
CAGE Code : F6151
Manufacturer: Safran
Item Name : Microcircuit Memory
Thank you for your interest in our available parts and components on NSN Target. Microcircuit Memory is an item listed with the part number 13401041-8, and it is manufactured by Safran. This particular item 13401041-8 is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.
NSN Parts is a website that is owned and operated by ASAP Semiconductor, and we serve as a leading independent distributor of NSN parts and components that serve many industries and applications. Throughout our extensive part and manufacturer catalogues, we carry a variety of top requested components that you may need, including 13401041-8 with NSN 5962012756635 and other parts manufactured by Safran. Quality is of the utmost importance to us at NSN Parts, and we have established ourselves as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today with a personalized quote and experience how we are revolutionizing the parts procurement process.
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 440 INCHES MINIMUM AND 1 470 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 515 INCHES MINIMUM AND 0 535 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 160 INCHES MINIMUM AND 0 190 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDWENABLE AND ASYNCHRONOUS AND LOW CURRENT AND HERMETICALLY SEALED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN17 INPUT |
MEMORY | CRHL | BIT QUANTITY65536 |
MEMORY | CSWJ | WORD QUANTITY8192 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
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