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Part G527307-401 With Different Manufacturers

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Buy G527307-401 with NSN 5962-01-388-0029 by Raytheon Company

Mfg Part Number: G527307-401

Alternate P/N: G527307401

NIIN : 013880029

CAGE Code : 54X10

Manufacturer: Raytheon Company

Item Name : Microcircuit Memory

Thank you for your interest in our available parts and components on NSN Target. Microcircuit Memory is an item listed with the part number G527307-401, and it is manufactured by Raytheon Company. This particular item G527307-401 is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.

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NSN Parts is a website that is owned and operated by ASAP Semiconductor, and we serve as a leading independent distributor of NSN parts and components that serve many industries and applications. Throughout our extensive part and manufacturer catalogues, we carry a variety of top requested components that you may need, including G527307-401 with NSN 5962013880029 and other parts manufactured by Raytheon Company. Quality is of the utmost importance to us at NSN Parts, and we have established ourselves as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today with a personalized quote and experience how we are revolutionizing the parts procurement process.  

NSN Information for Part Number G527307-401 with NSN 5962-01-388-0029, 5962013880029

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-388-0029

Item Description:

Microcircuit Memory

59620138800290ND
CIICHCCESDPMICCriticalityENAC
7DA0
Part NumberISCRNVCRNCCHCCMSDSSADC
G527307-401523

Characteristics Data of NSN 5962-01-388-0029, 5962013880029

MRCCriteriaCharacteristic
CXCYPart Name Assigned By Controlling Agency22-INPUT 10-OUTPUT AND-OR0LOGIC ARRAY
CZESHybrid Technology TypeMONOLITHIC
CZERMemory Device TypePAL
AEHXMaximum Power Dissipation Rating1.2 WATTS
CBBLFeatures ProvidedELECTROSTATIC SENSITIVE AND PROGRAMMED AND TESTED TO MIL-STD-883
TESTTest Data Document81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.).
CQSZInclosure ConfigurationDUAL-IN-LINE
AFGAOperating Temp Range-55.0/+125.0 DEG CELSIUS
MRCDecoded RequirementClear Text Reply
AFJQStorage Temp Range-65.0/+150.0 DEG CELSIUS
ZZZKSpecification/Standard Data67267-5962-8867001LA GOVERNMENT STANDARD
FEATSpecial FeaturesONE-TIME PROGRAMMABLE
CZENVoltage Rating And Type Per Characteristic-0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED
CTFTCase Outline Source And DesignatorD-9 MIL-M-38510
TTQYTerminal Type And Quantity24 PRINTED CIRCUIT
CWSGTerminal Surface TreatmentSOLDER
AGAVEnd Item IdentificationUSED ON:COBRA DANE NEXT ASSY:G526534
CZEQTime Rating Per Chacteristic25.00 NANOSECONDS NOMINAL ACCESS
CQWXOutput Logic FormCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

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