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Quality guaranteed We sell only warrantied and traceable partsMfg Part Number: N82S123N
NSN : 5962-01-050-9403
NIIN : 010509403
CAGE Code : 18324
Manufacturer: Philips Semiconductors Inc
Item Name : Microcircuit Memory
Thank you for your interest in our available parts and components on NSN Target. Microcircuit Memory is an item listed with the part number N82S123N, and it is manufactured by Philips Semiconductors Inc. This particular item N82S123N is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.
NSN Parts is a website that is owned and operated by ASAP Semiconductor, and we serve as a leading independent distributor of NSN parts and components that serve many industries and applications. Throughout our extensive part and manufacturer catalogues, we carry a variety of top requested components that you may need, including N82S123N with NSN 5962010509403 and other parts manufactured by Philips Semiconductors Inc. Quality is of the utmost importance to us at NSN Parts, and we have established ourselves as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today with a personalized quote and experience how we are revolutionizing the parts procurement process.
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 745 INCHES MINIMUM AND 0 755 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 245 INCHES MINIMUM AND 0 252 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 115 INCHES MINIMUM AND 0 125 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING332 8 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDBIPOLAR AND 3-STATE OUTPUT AND PROGRAMMED AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN6 INPUT |
| MEMORY | CRHL | BIT QUANTITY256 |
| MEMORY | CSWJ | WORD QUANTITY32 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC77 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC5 00 INPUT PICOFARADS MAXIMUM AND 8 00 OUTPUT PICOFARADS MAXIMUM |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC50 00 NANOSECONDS MAXIMUM ACCESS |
| MEMORY | CZER | MEMORY DEVICE TYPEPROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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