Mfg Part Number: MT3D19M-07
Alternate P/N: MT3D19M07
NSN : 5962-01-360-4026
NIIN : 013604026
CAGE Code : 6Y440
Manufacturer: Micron Technology Inc
Item Name : Microcircuit Memory
Thank you for your interest in our available parts and components on NSN Target. Microcircuit Memory is an item listed with the part number MT3D19M-07, and it is manufactured by Micron Technology Inc. This particular item MT3D19M-07 is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.
NSN Parts is a website that is owned and operated by ASAP Semiconductor, and we serve as a leading independent distributor of NSN parts and components that serve many industries and applications. Throughout our extensive part and manufacturer catalogues, we carry a variety of top requested components that you may need, including MT3D19M-07 with NSN 5962013604026 and other parts manufactured by Micron Technology Inc. Quality is of the utmost importance to us at NSN Parts, and we have established ourselves as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today with a personalized quote and experience how we are revolutionizing the parts procurement process.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-360-4026 Item Description: Microcircuit Memory | 5962 | 013604026 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Mt3d19m-07 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.575 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | POSITIVE OUTPUTS AND MONOLITHIC AND DYNAMIC AND ELECTROSTATIC SENSITIVE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | SINGLE-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM DELAY |
CZER | MEMORY DEVICE TYPE | RAM |
TTQY | TERMINAL TYPE AND QUANTITY | 30 PRINTED CIRCUIT |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
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