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Quality guaranteed We sell only warrantied and traceable partsMfg Part Number: MD51C68 35 B
Alternate P/N: MD51C6835B
NSN : 5962-01-354-7816
NIIN : 013547816
CAGE Code : 7U050
Manufacturer: Intel Corporation
Item Name : Microcircuit Memory
Thank you for your interest in our available parts and components on NSN Target. Microcircuit Memory is an item listed with the part number MD51C68 35 B, and it is manufactured by Intel Corporation. This particular item MD51C68 35 B is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.
NSN Parts is a website that is owned and operated by ASAP Semiconductor, and we serve as a leading independent distributor of NSN parts and components that serve many industries and applications. Throughout our extensive part and manufacturer catalogues, we carry a variety of top requested components that you may need, including MD51C68 35 B with NSN 5962013547816 and other parts manufactured by Intel Corporation. Quality is of the utmost importance to us at NSN Parts, and we have established ourselves as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today with a personalized quote and experience how we are revolutionizing the parts procurement process.
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN AND BIPOLAR AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND PROGRAMMED |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM ACCESS |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
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