Mfg Part Number: MIS-19581 23
Alternate P/N: MIS1958123
NSN : 5962-01-036-1555
NIIN : 010361555
CAGE Code : 1F221
Manufacturer: Hall Mark Electronics Corp
Item Name : Microcircuit Memory
Thank you for your interest in our available parts and components on NSN Target. Microcircuit Memory is an item listed with the part number MIS-19581 23, and it is manufactured by Hall Mark Electronics Corp. This particular item MIS-19581 23 is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.
NSN Parts is a website that is owned and operated by ASAP Semiconductor, and we serve as a leading independent distributor of NSN parts and components that serve many industries and applications. Throughout our extensive part and manufacturer catalogues, we carry a variety of top requested components that you may need, including MIS-19581 23 with NSN 5962010361555 and other parts manufactured by Hall Mark Electronics Corp. Quality is of the utmost importance to us at NSN Parts, and we have established ourselves as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today with a personalized quote and experience how we are revolutionizing the parts procurement process.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-036-1555 Item Description: Microcircuit Memory | 5962 | 010361555 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Mis-19581 23 | 5 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMED |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 130.00 MILLIAMPERES MAXIMUM SUPPLY |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM DELAY |
CZER | MEMORY DEVICE TYPE | PROM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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