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Quality guaranteed We sell only warrantied and traceable partsMfg Part Number: 1280PALC22V10-2
Alternate P/N: 1280PALC22V102
NSN : 5962-01-371-1421
NIIN : 013711421
CAGE Code : 72314
Item Name : Microcircuit Memory
Thank you for your interest in our available parts and components on NSN Target. Microcircuit Memory is an item listed with the part number 1280PALC22V10-2, and it is manufactured by Bae Systems Information And Electronic Systems Integration I. This particular item 1280PALC22V10-2 is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.
NSN Parts is a website that is owned and operated by ASAP Semiconductor, and we serve as a leading independent distributor of NSN parts and components that serve many industries and applications. Throughout our extensive part and manufacturer catalogues, we carry a variety of top requested components that you may need, including 1280PALC22V10-2 with NSN 5962013711421 and other parts manufactured by Bae Systems Information And Electronic Systems Integration I. Quality is of the utmost importance to us at NSN Parts, and we have established ourselves as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today with a personalized quote and experience how we are revolutionizing the parts procurement process.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-371-1421 Item Description: Microcircuit Memory | 5962 | 013711421 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1280palc22v10-2 | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC40 00 NANOSECONDS NOMINAL ACCESS |
| MEMORY | ZZZX | DEPARTURE FROM CITED DESIGNATORALTERED BY PROGRAMMINGTESTING & MARKING |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDCOMPATIBLE CMOS AND MONOLITHIC AND PROGRAMMED AND ULTRAVIOLET ERASABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM ABSOLUTE INPUT AND 7 0 VOLTS MAXIMUM ABSOLUTE INPUT |
| MEMORY | ZZZP | PURCHASE DESCRIPTION IDENTIFICATION72314-1280PALC22V10-2 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC16 00 MILLIAMPERES REVERSE CURRENT DC NOMINAL |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITMEMORYDIGITALCMOS UV ERASABLEPROGRAMMABLE ARRAY LOGICMONOLITHIC SILICON |
| MEMORY | CZES | HYBRID TECHNOLOGY TYPEMONOLITHIC |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 2 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONCONVERTSIGNDA EI FSCM 72314 |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA67268-5962-8753903LA GOVERNMENT STANDARD |
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