Mfg Part Number: 15-1326286-1
Alternate P/N: 1513262861
NSN : 5962-01-375-7492
NIIN : 013757492
CAGE Code : 34335
Manufacturer: Advanced Micro Devices Inc
Item Name : Microcircuit Memory
Thank you for your interest in our available parts and components on NSN Target. Microcircuit Memory is an item listed with the part number 15-1326286-1, and it is manufactured by Advanced Micro Devices Inc. This particular item 15-1326286-1 is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-375-7492 Item Description: Microcircuit Memory | 5962 | 013757492 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
15-1326286-1 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAU | BODY HEIGHT0 200 INCHES MINIMUM AND 0 220 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATIONHACRMPE REACT BASIC |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC5 00 MICROAMPERES MAXIMUM INPUT |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 6 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY |
MEMORY | CZER | MEMORY DEVICE TYPEEPROM |
MEMORY | FEAT | SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSHARDNESS CRITICAL ITEM SELECTED ITEM SELECTED FROM PN 5962-8961404MXX OR 5962-8961405MXXCAGE 67268 |
MEMORY | ADAT | BODY WIDTH0 585 INCHES MINIMUM AND 0 605 INCHES MAXIMUM |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROM128K X 8 27C010 MICROCIRCUITMEMORY DIGITALCMOS 128K X 8-BIT UVEPROMMONOLITHIC SILICON |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MINIMUM ACCESS AND 170 00 NANOSECONDS MAXIMUM ACCESS |
MEMORY | CZZZ | MEMORY CAPACITY128K X 8 |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT |
MEMORY | ADAQ | BODY LENGTH1 660 INCHES MINIMUM AND 1 680 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING330 0 MILLIWATTS |
MEMORY | CBBL | FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND RADIATION HARDENED AND ULTRAVIOLET ERASABLE AND TESTED TO MIL-STD-883 AND SELECTED ITEM |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | NHCF | NUCLEAR HARDNESS CRITICAL FEATUREHARDENED |
MEMORY | SPCL | SPECIAL TEST FEATURESSELECTED AND TESTED FOR RADIATION HARDNESS |
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